An example of such novel devices is based on spintronics. The dependence of the resistance of a material (due to the spin of the electrons) on an external field is called magnetoresistance. This effect can be significantly amplified (GMR - Giant Magneto-Resistance) for nanosized objects, for example when two ferromagnetic layers are separated by a nonmagnetic layer, which is several nanometers thick (e.g. Co-Cu-Co). The GMR effect has led to a strong increase in the data storage density of hard disks and made the giga byte range possible. The so called tunneling magnetoresistance (TMR) is very similar to GMR and based on the spin dependent tunneling of electrons through adjacent ferromagnetic layers. Both GMR and TMR effects can be used to create a non-volatile main memory for computers, such as the so called magnetic random access memory or MRAM.