Nanoelectronics focusses on new memory and logic devices in which the applications included use of (a) nanowire FETs to achieve ultimate electrostatic control of channel carrier depletion, (b) Ge based FET with shallow source/drain to mitigate short channel effects, (c) III-V nanowire on Si solutions, (d) strained channel FINFETs, (e) optical based interconnect solutions and (f) 4 terminal FET structures and geometries.Other research areas include (1) New state variables other than charge (to reduce energy), (2) devices that operate out of equilibrium with the thermal bath (to reduce noise and energy), (3) information transfer mechanisms that are not electromagnetic in nature (for interconnection purposes), (4) phonon engineering for advanced thermal management (to improve heat dissipation) (5) directed self-assembly (to reduce cost) and (6) emerging architectures (for higher functionality). The other approaches include (a) new state variables such as phase change devices, (b) new switche that exhibit high Ion/Ioff, (c) ballistic based transistors using graphene, (d) spin based devices that can incorporate both memory and logic functionality, (e) quantum dot based floating gate memory devices and (f) high efficiency light emitting diodes using exotic III-V materials.