The novel system based on CVD growth enables the production of both single and multi-wall nanotubes of reasonably high quality and consistency while offering the greatest potential for scale up.

There are a number of etch technologies available. For minimum dimensions dry etching is recommended although there are a number of specialised wet technologies such as crystallagraphically selective bulk silicon etching. Dry etch techniques are based on chlorine and fluorine chemistries and techniques include Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) and Magnetic Zero Resonant Induction etching (MORITM). These techniques give a very broad etch capability from nm resolution to etches which are several hundred mm deep.
Lithography

There are a number of lithography systems that can be used. Patterns down to sub micron feature sizes may be transferred using optical lithography techniques however for nanoscale images the Electron Beam (E-Beam) lithography system is recommended. The E-Beam is a direct write system with a minimum resolution of 20nm and can handle a wide range of sample sizes.
Substrate Doping

Substrates can be doped using high temperature furnace techniques or ion implantation with Rapid Thermal Annealing for shallow implants.