Transistors are made so tiny to reduce the size of sub assemblies of electronic systems and make smaller and smaller devices, but it is difficult to create high-quality junctions. In particular, it is very difficult to change the doping concentration of a material over distances shorter than about 10 nm. Researchers in Ireland have succeeded in making the first junctionless transistor having nearly ideal electrical properties. It could potentially operate faster and use less power than any conventional transistor on the market today. The device consists of a silicon nanowire in which current flow is perfectly controlled by a silicon gate that is separated from the nanowire by a thin insulating layer. The entire silicon nanowire is heavily n-doped, making it an excellent conductor. However, the gate is p-doped and its presence has the effect of depleting the number of electrons in the region of the nanowire under the gate. The device also has near-ideal electrical properties and behaves like the most perfect of transistors without suffering from current leakage like conventional devices and operates faster and using less energy.